Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process

Hoang, Ngoc Lam Huong
Nguyen, Minh Hieu
Nguyen, Thi Tien
Nguyen, Tran Thuat
Nguyen, Hoang Luong
Nb-doped Ti thin films were fabricated by co-sputtering of TiO2 doped 6 at% by Nb2O5 and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350oC in vacuum atmosphere. The electrical properties of the films were determined by the Hall method using standard clove-leaf geometry. When the Nb concentration increased, the number of electron increased from 4×1018 cm-3 to 2.4×1020 cm-3, while the resistivity fell down from 10 to 3.5×10-3 Ωcm. It means that this co-sputtering process can be considered as a method to improve conducting properties of Nb:Ti thin films. With low resistivity and high optical transmittance (higher than 80% in the visible range), the fabricated thin films can be applicable for transparent electrodes or heat-resistant coating.
Chi tiết xin mời tham khảo tại http://repository.vnu.edu.vn/handle/VNU_123/60544 
Title: Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process
Authors: Hoang, Ngoc Lam Huong
Nguyen, Minh Hieu
Nguyen, Thi Tien
Nguyen, Tran Thuat
Nguyen, Hoang Luong
Keywords: Electrical Properties;Nb-Doped TiO2;transparent conducting;Co-sputtering Process
Issue Date: 2017
Publisher: ĐHQGHN
Series/Report no.: Tập 33;Số 3
Description: tr. 44-50
URI: http://repository.vnu.edu.vn/handle/VNU_123/60544
ISSN: 2588-1124
Appears in Collections:Mathematics and Physics

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