Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process
Hoang, Ngoc Lam Huong
Nguyen, Minh Hieu
Nguyen, Thi Tien
Nguyen, Tran Thuat
Nguyen, Hoang Luong
Nguyen, Minh Hieu
Nguyen, Thi Tien
Nguyen, Tran Thuat
Nguyen, Hoang Luong
Nb-doped Ti thin films were fabricated by co-sputtering of TiO2 doped 6
at% by Nb2O5 and Nb targets. The anatase polycrystalline thin films were
obtained by post-annealing at 350oC in vacuum atmosphere. The
electrical properties of the films were determined by the Hall method
using standard clove-leaf geometry. When the Nb concentration increased,
the number of electron increased from 4×1018 cm-3 to 2.4×1020 cm-3,
while the resistivity fell down from 10 to 3.5×10-3 Ωcm. It means that
this co-sputtering process can be considered as a method to improve
conducting properties of Nb:Ti thin films. With low resistivity and high
optical transmittance (higher than 80% in the visible range), the
fabricated thin films can be applicable for transparent electrodes or
heat-resistant coating.
Chi tiết xin mời tham khảo tại http://repository.vnu.edu.vn/handle/VNU_123/60544
| Title: | Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
| Authors: | Hoang, Ngoc Lam Huong Nguyen, Minh Hieu Nguyen, Thi Tien Nguyen, Tran Thuat Nguyen, Hoang Luong |
| Keywords: | Electrical Properties;Nb-Doped TiO2;transparent conducting;Co-sputtering Process |
| Issue Date: | 2017 |
| Publisher: | ĐHQGHN |
| Series/Report no.: | Tập 33;Số 3 |
| Description: | tr. 44-50 |
| URI: | http://repository.vnu.edu.vn/handle/VNU_123/60544 |
| ISSN: | 2588-1124 |
| Appears in Collections: | Mathematics and Physics |
Nhận xét
Đăng nhận xét